Question 1

What is 28N10?

Accepted Answer

28N10 Transistor Datasheet, 28N10 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 28N10?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 85 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 28 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 300 pF, Package: TO252, Preliminary Data Sheet R07DS0507EJ0100NP28N10SDE Rev.1.00Sep 16, 2011MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) Low Ciss: Ciss = 2200

Question 3

What are equivalent components to 28N10?

Accepted Answer

Common equivalents include: 20P10, 21N06, 22N10, 2301H, 2301L, 25P06, 25P10, 25P10G

28N10 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	85 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	100 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	28 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	300 pF
Package	TO252
Preliminary Data Sheet R07DS0507EJ0100NP28N10SDE Rev.1.00Sep 16, 2011MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) Low Ciss	Ciss = 2200