25P10 MOSFET — Specifications & Equivalents

About the 25P10

The 25P10 is a MOSFET with a drain–source voltage (VDS) rating of 100 V and a continuous drain current (ID) of 30 A. It can dissipate up to 120 W and is rated to a junction temperature of 175 °C. It is supplied in the TO251 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 100 V
  • Max continuous drain current (ID): 30 A
  • Power dissipation (PD): 120 W
  • Max junction temperature (TJ): 175 °C
  • Package: TO251

Typical applications

With its 100 V drain–source rating the 25P10 sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 790 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 25P10

A drop-in substitute for the 25P10 should match its polarity and offer a drain–source rating of at least 100 V and a continuous drain current rating of at least 30 A.

Mechanically, check the replacement against the TO251 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 25P10?

The 25P10 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 30 A continuous drain current.

What is the maximum voltage of the 25P10?

The 25P10 has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 25P10 handle?

It is rated for 30 A of continuous drain current, with power dissipation limited to 120 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 25P10 come in?

It is listed in TO251. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 25P10?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation120 W
|Vds|ⓘ - Maximum Drain-Source Voltage100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current30 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance790 pF
PackageTO251
SUP25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100 at VGS = - 6 V - 16.
SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100 at VGS = - 6 V - 16.

Equivalent & Replacement Parts

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