Question 1

What is 25P10?

Accepted Answer

25P10 Transistor Datasheet, 25P10 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 25P10?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 120 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 30 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 790 pF, Package: TO251, SUP25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization: 0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100 at VGS = - 6 V - 16., SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization: 0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100 at VGS = - 6 V - 16.

Question 3

What are equivalent components to 25P10?

Accepted Answer

Common equivalents include: 18N10, 2002A, 20P10, 21N06, 22N10, 2301H, 2301L, 25P06

25P10 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	120 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	100 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	30 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	790 pF
Package	TO251
SUP25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization	0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100 at VGS = - 6 V - 16.
SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization	0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100 at VGS = - 6 V - 16.