30P10A MOSFET — Specifications & Equivalents
MOSFET P -Channel - 30P10A
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | P -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 30 A |
| Drain-Source On-Resistance (Rds) | 0.045 |
| Rise Time (tr) | 80 nS |
| Output Capacitance (Coss) | 790 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220 TO251 TO252 |
| Power Dissipation (Pd) | 120 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 30P10A yet.