SPB80N03S2-03 MOSFET — Specifications & Equivalents

About the SPB80N03S2-03

The SPB80N03S2-03 is a MOSFET with a drain–source voltage (V_DS) rating of 30 V and a continuous drain current (I_D) of 80 A. It can dissipate up to 300 W and is rated to a junction temperature of 175 °C. It is supplied in the TO263 package.

At a glance

• Type: MOSFET
• Max drain–source voltage (V_DS): 30 V
• Max continuous drain current (I_D): 80 A
• Power dissipation (P_D): 300 W
• Max junction temperature (T_J): 175 °C
• Package: TO263
• Manufacturer: Commonly produced by Infineon

Typical applications

With its 30 V drain–source rating the SPB80N03S2-03 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The 80 A current rating puts it in high-current territory, where conduction loss (I² × R_DS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (C_oss) of 2420 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the SPB80N03S2-03

A drop-in substitute for the SPB80N03S2-03 should match its polarity and offer a drain–source rating of at least 30 V and a continuous drain current rating of at least 80 A.

Mechanically, check the replacement against the TO263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the SPB80N03S2-03?

The SPB80N03S2-03 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 80 A continuous drain current.

What is the maximum voltage of the SPB80N03S2-03?

The SPB80N03S2-03 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the SPB80N03S2-03 handle?

It is rated for 80 A of continuous drain current, with power dissipation limited to 300 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the SPB80N03S2-03 come in?

It is listed in TO263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the SPB80N03S2-03?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.