L1N60 MOSFET — Specifications & Equivalents

MOSFET N -Channel - L1N60

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)600 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)1.2 A
Drain-Source On-Resistance (Rds)11.5
Rise Time (tr)25 nS
Output Capacitance (Coss)20 pF
Junction Temperature (Tj)150 °C
PackageTO252 TO251
Power Dissipation (Pd)40 W

Equivalent & Replacement Parts

No verified equivalents are listed for L1N60 yet.

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