P0165AI MOSFET — Specifications & Equivalents
MOSFET N -Channel - P0165AI
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 1 A |
| Drain-Source On-Resistance (Rds) | 14 |
| Rise Time (tr) | 40 nS |
| Output Capacitance (Coss) | 58 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO251 |
| Power Dissipation (Pd) | 27.6 W |
Equivalent & Replacement Parts
No verified equivalents are listed for P0165AI yet.