IXFH50N50P3 MOSFET — Specifications & Equivalents

About the IXFH50N50P3

The IXFH50N50P3 is a MOSFET with a drain–source voltage (V_DS) rating of 500 V and a continuous drain current (I_D) of 50 A. It can dissipate up to 960 W and is rated to a junction temperature of 150 °C. It is supplied in the TO247 package.

At a glance

• Type: MOSFET
• Max drain–source voltage (V_DS): 500 V
• Max continuous drain current (I_D): 50 A
• Power dissipation (P_D): 960 W
• Max junction temperature (T_J): 150 °C
• Package: TO247
• Manufacturer: Commonly produced by IXYS

Typical applications

With its 500 V drain–source rating the IXFH50N50P3 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

The 50 A current rating puts it in high-current territory, where conduction loss (I² × R_DS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (C_oss) of 540 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the IXFH50N50P3

A drop-in substitute for the IXFH50N50P3 should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 50 A.

Mechanically, check the replacement against the TO247 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IXFH50N50P3?

The IXFH50N50P3 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 50 A continuous drain current.

What is the maximum voltage of the IXFH50N50P3?

The IXFH50N50P3 has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IXFH50N50P3 handle?

It is rated for 50 A of continuous drain current, with power dissipation limited to 960 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the IXFH50N50P3 come in?

It is listed in TO247. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IXFH50N50P3?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.