JBE112T Transistor — Specifications & Equivalents
JBE112T Transistor Datasheet, JBE112T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 250 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 110 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 199 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 1479 pF |
| Package | TO263 |
Equivalent & Replacement Parts
- JMSH0602PGQ
- JMSH0602PK
- JBE102G
- JBE102T
- JBE102Y
- JBE103T
- JBE111P
- JBE112Q
- MMIS60R580P
- JBE113P
- JBL083M
- JBL101N
- JMSH0605AGD
- JMSH0605AGDQ
- JMSH0606AG
- JMSH0606AGQ
- JMSH0606AK