SIHFD123 MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by Vishay Siliconix

About the SIHFD123

The SIHFD123 is a MOSFET with a drain–source voltage (VDS) rating of 100 V and a continuous drain current (ID) of 1.3 A. It can dissipate up to 1.3 W and is rated to a junction temperature of 175 °C. It is supplied in the HEXDIP package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 100 V
  • Max continuous drain current (ID): 1.3 A
  • Power dissipation (PD): 1.3 W
  • Max junction temperature (TJ): 175 °C
  • Package: HEXDIP
  • Manufacturer: Commonly produced by Vishay Siliconix

Typical applications

With its 100 V drain–source rating the SIHFD123 sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 150 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the SIHFD123

A drop-in substitute for the SIHFD123 should match its polarity and offer a drain–source rating of at least 100 V and a continuous drain current rating of at least 1.3 A.

Mechanically, check the replacement against the HEXDIP footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the SIHFD123?

The SIHFD123 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 1.3 A continuous drain current.

What is the maximum voltage of the SIHFD123?

The SIHFD123 has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the SIHFD123 handle?

It is rated for 1.3 A of continuous drain current, with power dissipation limited to 1.3 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the SIHFD123 come in?

It is listed in HEXDIP. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the SIHFD123?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current1.3 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance150 pF
PackageHEXDIP

Equivalent & Replacement Parts

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