BC547 Transistor — Specifications & Equivalents
BC547 Transistor Datasheet pdf, BC547 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 0.1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 300 MHz |
| Collector Capacitance (Cc) | 6 pF |
| Forward Current Transfer Ratio (hFE), MIN | 110 |
| Noise Figure, dB | - |
| Package | TO92 |
| BC546/547/548/549/550Switching and Applications High Voltage | BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE |