C1815 Transistor — Specifications & Equivalents
C1815 Transistor Datasheet pdf, C1815 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.15 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 80 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 130 |
| Noise Figure, dB | - |
| Package | SOT23 |
| C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE ALPower Dissipation 33Top View C B11 22K ECollector MARKING | HF 3 DH JF G1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encap sulate Transistors *SOT-23 C1815 TRANSI STOR (NPN) FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR MARKING | HF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitt |
| C1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING | C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj |