40P04 Transistor — Specifications & Equivalents
40P04 Transistor Datasheet, 40P04 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 65 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 40 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 40 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 551 pF |
| Package | TO252 |
| TK40P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P04M1TK40P04M1TK40P04M1TK40P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge | QSW = 7.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.5 m (t |