Question 1

What is 60N04?

Accepted Answer

60N04 Transistor Datasheet, 60N04 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 60N04?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 65 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 60 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 280 pF, Package: TO251 TO252, Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

Question 3

What are equivalent components to 60N04?

Accepted Answer

Common equivalents include: 3400L, 3401A, 3401L, 40N10K, 40P04, 45P40, 50N03, 5P40

60N04 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	65 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	40 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	60 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	280 pF
Package	TO251 TO252
Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss	Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe