60N04 MOSFET — Specifications & Equivalents
About the 60N04
The 60N04 is a MOSFET with a drain–source voltage (VDS) rating of 40 V and a continuous drain current (ID) of 60 A. It can dissipate up to 65 W and is rated to a junction temperature of 175 °C. It is available in TO251 and TO252 packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 40 V
- Max continuous drain current (ID): 60 A
- Power dissipation (PD): 65 W
- Max junction temperature (TJ): 175 °C
- Package: TO251, TO252
Typical applications
With its 40 V drain–source rating the 60N04 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 60 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 280 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 60N04
A drop-in substitute for the 60N04 should match its polarity and offer a drain–source rating of at least 40 V and a continuous drain current rating of at least 60 A.
Mechanically, check the replacement against the TO251 and TO252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 60N04?
The 60N04 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 40 V drain-source and 60 A continuous drain current.
What is the maximum voltage of the 60N04?
The 60N04 has a maximum drain-source voltage (Vds) of 40 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 60N04 handle?
It is rated for 60 A of continuous drain current, with power dissipation limited to 65 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 60N04 come in?
It is listed in TO251 and TO252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 60N04?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 65 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 40 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 60 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 280 pF |
| Package | TO251 TO252 |
| Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss | Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe |