Question 1

What is 2N7002WT1?

Accepted Answer

2N7002WT1 Transistor Datasheet, 2N7002WT1 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002WT1?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.225 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.115 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 10 pF, Package: SOT323, LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected: 1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim, February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking: 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par

Question 3

What are equivalent components to 2N7002WT1?

Accepted Answer

Common equivalents include: KTK697TV, KTK698TV, KTX598TF, 2N4003NLT1, 2N7002DW1T1, 2N7002ELT1, 2N7002LT1, 2N7002NT1

2N7002WT1 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.225 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.115 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	10 pF
Package	SOT323
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected	1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim
February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking	2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par