2N7002LT1 Transistor — Specifications & Equivalents
2N7002LT1 Transistor Datasheet, 2N7002LT1 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.225 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.115 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 10 pF |
| Package | SOT23 |
| L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected | 1000V2. |
Equivalent & Replacement Parts
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