Question 1

What is 2N4003NLT1?

Accepted Answer

2N4003NLT1 Transistor Datasheet, 2N4003NLT1 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N4003NLT1?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.69 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.5 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 19.7 pF, Package: SOT23, 2N4003K3 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET10.5 AMPERES GATEP b Lead(Pb)-Free*DRAIN SOUCE VOLTAGE* Gate 30 VOLTAGE PretectionFeatures: DiodeSOURCE 2* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.* Low Gate Charge for Fast Switching.3* ESD Protected Gate.* Minimum Breakdown Voltage Rating of 30V.12

Question 3

What are equivalent components to 2N4003NLT1?

Accepted Answer

Common equivalents include: KTK597E, KTK597TV, KTK597V, KTK598TV, KTK598V, KTK697TV, KTK698TV, KTX598TF

2N4003NLT1 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.69 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	30 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.5 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	19.7 pF
Package	SOT23
2N4003K3 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET10.5 AMPERES GATEP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE Gate 30 VOLTAGE PretectionFeatures	DiodeSOURCE 2* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.* Low Gate Charge for Fast Switching.3* ESD Protected Gate.* Minimum Breakdown Voltage Rating of 30V.12