2N4003NLT1 MOSFET — Specifications & Equivalents

Manufacturer: Multi-source (JEDEC registered part number)

About the 2N4003NLT1

The 2N4003NLT1 is a MOSFET with a drain–source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 0.5 A. It can dissipate up to 0.69 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT23 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 30 V
  • Max continuous drain current (ID): 0.5 A
  • Power dissipation (PD): 0.69 W
  • Max junction temperature (TJ): 150 °C
  • Package: SOT23
  • Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

With its 30 V drain–source rating the 2N4003NLT1 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

At 0.5 A it is aimed at small-signal and light-load switching rather than power conversion.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 19.7 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 2N4003NLT1

A drop-in substitute for the 2N4003NLT1 should match its polarity and offer a drain–source rating of at least 30 V and a continuous drain current rating of at least 0.5 A.

Mechanically, check the replacement against the SOT23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N4003NLT1 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N4003NLT1?

The 2N4003NLT1 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 0.5 A continuous drain current.

What is the maximum voltage of the 2N4003NLT1?

The 2N4003NLT1 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 2N4003NLT1 handle?

It is rated for 0.5 A of continuous drain current, with power dissipation limited to 0.69 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 2N4003NLT1 come in?

It is listed in SOT23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N4003NLT1?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation0.69 W
|Vds|ⓘ - Maximum Drain-Source Voltage30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current0.5 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance19.7 pF
PackageSOT23
2N4003K3 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET10.5 AMPERES GATEP b Lead(Pb)-Free*DRAIN SOUCE VOLTAGE* Gate 30 VOLTAGE PretectionFeaturesDiodeSOURCE 2* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.* Low Gate Charge for Fast Switching.3* ESD Protected Gate.* Minimum Breakdown Voltage Rating of 30V.12

Equivalent & Replacement Parts

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