Question 1

What is 2N7002DW1T1?

Accepted Answer

2N7002DW1T1 Transistor Datasheet, 2N7002DW1T1 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002DW1T1?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.25 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.115 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 25 pF, Package: SOT363, L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected: 1000V2. DE, LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected: 1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo, October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking: 2NAbsolute Maximum Ratings * Ta = 25C un

Question 3

What are equivalent components to 2N7002DW1T1?

Accepted Answer

Common equivalents include: KTK597TV, KTK597V, KTK598TV, KTK598V, KTK697TV, KTK698TV, KTX598TF, 2N4003NLT1

2N7002DW1T1 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.25 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.115 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	25 pF
Package	SOT363
L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected	1000V2. DE
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected	1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo
October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking	2NAbsolute Maximum Ratings * Ta = 25C un