STP80N20M5 MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by STMicroelectronics

About the STP80N20M5

The STP80N20M5 is a MOSFET with a drain–source voltage (VDS) rating of 200 V and a continuous drain current (ID) of 61 A. It can dissipate up to 190 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 200 V
  • Max continuous drain current (ID): 61 A
  • Power dissipation (PD): 190 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220
  • Manufacturer: Commonly produced by STMicroelectronics

Typical applications

With its 200 V drain–source rating the STP80N20M5 sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.

The 61 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

Gate drive and switching notes

Keep gate–source voltage within the ±25 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 275 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the STP80N20M5

A drop-in substitute for the STP80N20M5 should match its polarity and offer a drain–source rating of at least 200 V and a continuous drain current rating of at least 61 A.

Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the STP80N20M5?

The STP80N20M5 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 200 V drain-source and 61 A continuous drain current.

What is the maximum voltage of the STP80N20M5?

The STP80N20M5 has a maximum drain-source voltage (Vds) of 200 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the STP80N20M5 handle?

It is rated for 61 A of continuous drain current, with power dissipation limited to 190 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the STP80N20M5 come in?

It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the STP80N20M5?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation190 W
|Vds|ⓘ - Maximum Drain-Source Voltage200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage25 V
|Id| ⓘ - Maximum Drain Current61 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance275 pF
PackageTO220

Equivalent & Replacement Parts

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