STP7NM60N MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by STMicroelectronics

About the STP7NM60N

The STP7NM60N is a MOSFET with a drain–source voltage (VDS) rating of 600 V and a continuous drain current (ID) of 5 A. It can dissipate up to 45 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 600 V
  • Max continuous drain current (ID): 5 A
  • Power dissipation (PD): 45 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220
  • Manufacturer: Commonly produced by STMicroelectronics

Typical applications

With its 600 V drain–source rating the STP7NM60N sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±25 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 24.6 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the STP7NM60N

A drop-in substitute for the STP7NM60N should match its polarity and offer a drain–source rating of at least 600 V and a continuous drain current rating of at least 5 A.

Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the STP7NM60N?

The STP7NM60N is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 5 A continuous drain current.

What is the maximum voltage of the STP7NM60N?

The STP7NM60N has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the STP7NM60N handle?

It is rated for 5 A of continuous drain current, with power dissipation limited to 45 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the STP7NM60N come in?

It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the STP7NM60N?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation45 W
|Vds|ⓘ - Maximum Drain-Source Voltage600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage25 V
|Id| ⓘ - Maximum Drain Current5 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance24.6 pF
PackageTO220

Equivalent & Replacement Parts

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