IRFD123 Transistor — Specifications & Equivalents
IRFD123 Transistor Datasheet, IRFD123 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 1.3 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 100 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 1.3 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 150 pF |
| Package | HEXDIP |
Equivalent & Replacement Parts
- RFL1P08
- RFL1P10
- RFP2N18L
- AP9916H
- AP9916J
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