SGT40N60NPFDPN Transistor — Specifications & Equivalents
SGT40N60NPFDPN Transistor Datasheet, SGT40N60NPFDPN Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 290 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 600 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 20 V |
| |Ic|ⓘ - Maximum Collector Current | 80 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.8 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 180 pF |
| Package | TO3P |
Equivalent & Replacement Parts
- SGM75HF12A1TFDT4
- SGM75HF12A1TLD
- SGT15T60QD1F
- SGT20T60SDM1P7
- SGT25T120FD1P7
- SGT25U120FD1P7
- SGT40N60FD2PN
- SGT40N60FD2P7
- IXGH60N60
- SGT50T65FD1PN
- SGT50T65FD1P7
- SGT50T65FD1PS
- SGT50T65FD1PT
- SGTP5T60SD1D
- SGTP5T60SD1F
- SGTP5T60SD1S
- AU40N120T3A2