SGT50T65FD1PT Transistor — Specifications & Equivalents
SGT50T65FD1PT Transistor Datasheet, SGT50T65FD1PT Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 235 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 650 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 20 V |
| |Ic|ⓘ - Maximum Collector Current | 100 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 2.2 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 90 pF |
| Package | TO3PN |
Equivalent & Replacement Parts
- SGT25T120FD1P7
- SGT25U120FD1P7
- SGT40N60FD2PN
- SGT40N60FD2P7
- SGT40N60NPFDPN
- SGT50T65FD1PN
- SGT50T65FD1P7
- SGT50T65FD1PS
- FGA25N120ANTD
- SGTP5T60SD1D
- SGTP5T60SD1F
- SGTP5T60SD1S
- AU40N120T3A2
- LGM100HF120S2F1A
- LGM400HF65S4T1A
- YGF15N65T2
- YGK15N65T2