IXGH60N60 Transistor — Specifications & Equivalents
IXGH60N60 Transistor Datasheet, IXGH60N60 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 300 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 600 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 20 V |
| |Ic|ⓘ - Maximum Collector Current | 75 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.7(max) V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 290 pF |
| Package | TO247 |
Equivalent & Replacement Parts
- IXGH40N30
- IXGH40N30S
- IXGH40N30A
- IXGH40N30B
- IXGH40N30BD1
- IXGH41N60
- IXGH50N60A
- IXGH50N60B
- STGW60V60DF
- IXGK120N60B
- IXGK50N50BU1
- IXGK50N60AU1
- IXGK50N60B
- IXGK50N60BD1
- IXGK50N60BU1
- IXGK60N60
- IXGK80N60A