IRFP430 MOSFET — Specifications & Equivalents

About the IRFP430

The IRFP430 is a MOSFET with a drain–source voltage (V_DS) rating of 500 V and a continuous drain current (I_D) of 4.5 A. It can dissipate up to 75 W and is rated to a junction temperature of 150 °C. It is supplied in the TO3P package.

At a glance

• Type: MOSFET
• Max drain–source voltage (V_DS): 500 V
• Max continuous drain current (I_D): 4.5 A
• Power dissipation (P_D): 75 W
• Max junction temperature (T_J): 150 °C
• Package: TO3P
• Manufacturer: Commonly produced by International Rectifier (now Infineon)

Typical applications

With its 500 V drain–source rating the IRFP430 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (C_oss) of 86 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the IRFP430

A drop-in substitute for the IRFP430 should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 4.5 A.

Mechanically, check the replacement against the TO3P footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRFP430?

The IRFP430 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 4.5 A continuous drain current.

What is the maximum voltage of the IRFP430?

The IRFP430 has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRFP430 handle?

It is rated for 4.5 A of continuous drain current, with power dissipation limited to 75 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the IRFP430 come in?

It is listed in TO3P. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRFP430?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.