IRFP430 Transistor — Specifications & Equivalents
IRFP430 Transistor Datasheet, IRFP430 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 75 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 4.5 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 86 pF |
| Package | TO3P |
| PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m | RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery |
| PD - 97123AIRFP4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m | l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)134A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dt |