IRFP350A MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRFP350A
The IRFP350A is a MOSFET with a drain–source voltage (VDS) rating of 400 V and a continuous drain current (ID) of 17 A. It can dissipate up to 202 W and is rated to a junction temperature of 150 °C. It is supplied in the TO3P package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 400 V
- Max continuous drain current (ID): 17 A
- Power dissipation (PD): 202 W
- Max junction temperature (TJ): 150 °C
- Package: TO3P
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 400 V drain–source rating the IRFP350A sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 305 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRFP350A
A drop-in substitute for the IRFP350A should match its polarity and offer a drain–source rating of at least 400 V and a continuous drain current rating of at least 17 A.
Mechanically, check the replacement against the TO3P footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRFP350A?
The IRFP350A is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 400 V drain-source and 17 A continuous drain current.
What is the maximum voltage of the IRFP350A?
The IRFP350A has a maximum drain-source voltage (Vds) of 400 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRFP350A handle?
It is rated for 17 A of continuous drain current, with power dissipation limited to 202 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the IRFP350A come in?
It is listed in TO3P. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRFP350A?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 202 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 400 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 17 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 305 pF |
| Package | TO3P |
| IRFP350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current | 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characterist |
| Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current | 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu |
| isc N-Channel MOSFET Transistor IRFP350AFEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage- | V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies |