IRFP343 Transistor — Specifications & Equivalents
IRFP343 Transistor Datasheet, IRFP343 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 125 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 350 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 8.3 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 178 pF |
| Package | TO3P |
| INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- | VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.80(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA |