FGH60N60SMD Transistor — Specifications & Equivalents
FGH60N60SMD Transistor Datasheet, FGH60N60SMD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 600 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 600 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 20 V |
| |Ic|ⓘ - Maximum Collector Current | 120 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.9 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 175 ℃ |
| Coesⓘ - Output Capacitance, typ | 270 pF |
| Package | TO247 |
| March 2011FGH60N60SMDtm600V, 60A Field Stop IGBTFeatures General Description Maximum Junction Temperature | TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High c |
| April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage | VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi |
| July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage | VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc |
Equivalent & Replacement Parts
- FGH40N60SMD
- FGH40N60SMDF
- FGH40N60UF
- FGH40N60UFD
- FGH40N65UFD
- FGH50N3
- FGH60N60SF
- FGH60N60SFD
- GT30J124
- FGH60N60UFD
- FGH75N60UF
- FGH80N60FD
- FGH80N60FD2
- FGL35N120FTD
- FGL60N100BNTD
- FGP20N60UFD
- FGP5N60LS