Question 1

What is FGH40N60UFD?

Accepted Answer

FGH40N60UFD Transistor Datasheet, FGH40N60UFD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of FGH40N60UFD?

Accepted Answer

Key specifications include: Pcⓘ - Maximum Power Dissipation: 290 W, |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V, |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V, |Ic|ⓘ - Maximum Collector Current: 80 A @25℃, |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃, Tjⓘ - Maximum Junction Temperature: 150 ℃, Coesⓘ - Output Capacitance, typ: 200 pF, Package: TO247, April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw, July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit, FGH40N60UF600 V, 40 A Field Stop IGBTGeneral DescriptionUsing novel field stop IGBT technology, ON Semicondcutors Features field stop IGBTs offer the optimum performance for solar High Current Capabilityinverter, UPS, welder and PFC applications where low Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A conduction and switch-ing losses are essential. High Inp

Question 3

What are equivalent components to FGH40N60UFD?

Accepted Answer

Common equivalents include: FGH25N120FTDS, FGH30N120FTD, FGH30N60LSD, FGH40N60SF, FGH40N60SFD, FGH40N60SMD, FGH40N60SMDF, FGH40N60UF

FGH40N60UFD Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pcⓘ - Maximum Power Dissipation	290 W
\|Vce\|ⓘ - Maximum Collector-Emitter Voltage	600 V
\|Vge\|ⓘ - Maximum Gate-Emitter Voltage	20 V
\|Ic\|ⓘ - Maximum Collector Current	80 A @25℃
\|VCEsat\|ⓘ - Collector-Emitter saturation Voltage, typ	1.8 V @25℃
Tjⓘ - Maximum Junction Temperature	150 ℃
Coesⓘ - Output Capacitance, typ	200 pF
Package	TO247
April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage	VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw
July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage	VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit
FGH40N60UF600 V, 40 A Field Stop IGBTGeneral DescriptionUsing novel field stop IGBT technology, ON Semicondcutors Features field stop IGBTs offer the optimum performance for solar High Current Capabilityinverter, UPS, welder and PFC applications where low Low Saturation Voltage	VCE(sat) = 1.8 V @ IC = 40 A conduction and switch-ing losses are essential. High Inp