GT30J124 transistor — Specifications & Equivalents
About the GT30J124
The GT30J124 is a transistor. It is supplied in the TO220SIS package.
At a glance
- Type: transistor
- Package: TO220SIS
Choosing a replacement for the GT30J124
A drop-in substitute for the GT30J124 should match its polarity and meet or exceed every rating listed above.
Mechanically, check the replacement against the TO220SIS footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the GT30J124?
The GT30J124 is a transistor.
What package does the GT30J124 come in?
It is listed in TO220SIS. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the GT30J124?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 26 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 600 V |
| |Ic|ⓘ - Maximum Collector Current | 200(pulse) A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 2.4 V @25℃ |
| Package | TO220SIS |
| GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit | mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl |
| GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit | mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ |
| GT30J122ADiscrete IGBTs Silicon N-Channel IGBTGT30J122AGT30J122AGT30J122AGT30J122A1. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote | The product(s) described herein should not be used for any other application.2. F |
| GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit | mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = |
Equivalent & Replacement Parts
- GT30F125
- GT45F127
- GT45F128
- GT30F131
- GT30G124
- GT30G125
- GT45G127
- GT45G128
- STGW60V60DF
- GT5G133
- GT5J301
- GT8G151
- GT10G131
- GT10J303
- GT10J321
- GT15J301
- GT15J321