Question 1

What is FGH40N60SFD?

Accepted Answer

FGH40N60SFD Transistor Datasheet, FGH40N60SFD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of FGH40N60SFD?

Accepted Answer

Key specifications include: Pcⓘ - Maximum Power Dissipation: 290 W, |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V, |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V, |Ic|ⓘ - Maximum Collector Current: 80 A @25℃, |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃, Tjⓘ - Maximum Junction Temperature: 150 ℃, Coesⓘ - Output Capacitance, typ: 200 pF, Package: TO247, July 2008FGH40N60SFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where High input impedancelow conduction and swi, March 2015FGH40N60SFD600 V, 40 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds field stopIGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 Awelder, microwave oven, telecom, ESS and PFC applications High Input Impedancewhere low cond, March 2009FGH40N60SFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInverter, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switching

Question 3

What are equivalent components to FGH40N60SFD?

Accepted Answer

Common equivalents include: FGD3N60LSD, FGD4536, FGH20N60SFD, FGH20N60UFD, FGH25N120FTDS, FGH30N120FTD, FGH30N60LSD, FGH40N60SF

FGH40N60SFD Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pcⓘ - Maximum Power Dissipation	290 W
\|Vce\|ⓘ - Maximum Collector-Emitter Voltage	600 V
\|Vge\|ⓘ - Maximum Gate-Emitter Voltage	20 V
\|Ic\|ⓘ - Maximum Collector Current	80 A @25℃
\|VCEsat\|ⓘ - Collector-Emitter saturation Voltage, typ	2.3 V @25℃
Tjⓘ - Maximum Junction Temperature	150 ℃
Coesⓘ - Output Capacitance, typ	200 pF
Package	TO247
July 2008FGH40N60SFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage	VCE(sat) =2.3V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where High input impedancelow conduction and swi
March 2015FGH40N60SFD600 V, 40 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds field stopIGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage	VCE(sat) = 2.3 V @ IC = 40 Awelder, microwave oven, telecom, ESS and PFC applications High Input Impedancewhere low cond
March 2009FGH40N60SFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage	VCE(sat) =2.3V @ IC = 40AInverter, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switching