FGD4536 Transistor — Specifications & Equivalents
FGD4536 Transistor Datasheet, FGD4536 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 125 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 360 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 30 V |
| |Ic|ⓘ - Maximum Collector Current | 50 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.59 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 56 pF |
| Package | TO252 |
| April 2013FGD4536360 V PDP Trench IGBTFeatures General Description High Current Capability Using novel trench IGBT technology, Fairchilds new series oftrench IGBTs offer the optimum performance for consumer Low Saturation Voltage | VCE(sat) = 1.59 V @ IC = 50 Aappliances and PDP TV applications where low conduction and High Input Impedanceswitching losses are esse |
Equivalent & Replacement Parts
- FGA50N100BNTD2
- FGA60N60UFD
- FGA90N33ATD
- FGAF40N60UF
- FGAF40N60UFD
- FGB20N60SF
- FGB20N60SFD
- FGD3N60LSD
- HGTG30N60A4
- FGH20N60SFD
- FGH20N60UFD
- FGH25N120FTDS
- FGH30N120FTD
- FGH30N60LSD
- FGH40N60SF
- FGH40N60SFD
- FGH40N60SMD