8N60 MOSFET — Specifications & Equivalents
About the 8N60
The 8N60 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 600 V, a continuous drain current (ID) of 8 A and an on-resistance (RDS(on)) of 1 Ω. It can dissipate up to 147 W and is rated to a junction temperature of 150 °C. It is available in TO-220, TO-220F, TO-220F1 and TO-262 packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 600 V
- Max continuous drain current (ID): 8 A
- On-resistance (RDS(on)): 1 Ω
- Gate threshold (VGS(th)): 4 V
- Power dissipation (PD): 147 W
- Max junction temperature (TJ): 150 °C
- Package: TO-220, TO-220F, TO-220F1, TO-262
Typical applications
With its 600 V drain–source rating the 8N60 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
On-resistance of 1 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
With a gate threshold (VGS(th)) of 4 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking VGS to 10 V.
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 28 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 60.5 ns and an output capacitance (Coss) of 105 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 8N60
A drop-in substitute for the 8N60 must be the same N-channel type and offer a drain–source rating of at least 600 V, a continuous drain current rating of at least 8 A, an on-resistance no higher than 1 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.
Mechanically, check the replacement against the TO-220, TO-220F, TO-220F1 and TO-262 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 8N60?
The 8N60 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 8 A continuous drain current.
What is the maximum voltage of the 8N60?
The 8N60 has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 8N60 handle?
It is rated for 8 A of continuous drain current, with power dissipation limited to 147 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the 8N60?
On-resistance (Rds(on)) is 1 Ω. Multiply by the square of your load current to estimate conduction loss.
Is the 8N60 logic-level compatible?
No. The gate threshold is 4 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.
What package does the 8N60 come in?
It is listed in TO-220, TO-220F, TO-220F1 and TO-262. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 8N60?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 600 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Gate Threshold Voltage (Vgsth) | 4 V |
| Drain Current (Id) | 8 A |
| Drain-Source On-Resistance (Rds) | 1 |
| Total Gate Charge (Qg) | 28 nC |
| Rise Time (tr) | 60.5 nS |
| Output Capacitance (Coss) | 105 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-220 TO-220F TO-220F1 TO-262 |
| Power Dissipation (Pd) | 147 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 8N60 yet.