8N60 MOSFET — Specifications & Equivalents
MOSFET N -Channel - 8N60
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 600 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Gate Threshold Voltage (Vgsth) | 4 V |
| Drain Current (Id) | 8 A |
| Drain-Source On-Resistance (Rds) | 1 |
| Total Gate Charge (Qg) | 28 nC |
| Rise Time (tr) | 60.5 nS |
| Output Capacitance (Coss) | 105 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-220 TO-220F TO-220F1 TO-262 |
| Power Dissipation (Pd) | 147 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 8N60 yet.