2SD1046 Transistor — Specifications & Equivalents
2SD1046 Transistor Datasheet pdf, 2SD1046 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 80 W |
| Maximum Collector-Base Voltage |Vcb| | 150 V |
| Maximum Collector-Emitter Voltage |Vce| | 120 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 8 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 15 MHz |
| Collector Capacitance (Cc) | 160 pF |
| Forward Current Transfer Ratio (hFE), MIN | 60 |
| Noise Figure, dB | - |
| Package | TO247 |
| INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1046DESCRIPTIONCollector-Emitter Breakdown Voltage- | V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB816Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor LF power amplifier, 50W output |