Question 1

What is 2SD1044A?

Accepted Answer

2SD1044A Transistor Datasheet pdf, 2SD1044A Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SD1044A?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 60 W, Maximum Collector-Base Voltage |Vcb|: 170 V, Maximum Emitter-Base Voltage |Veb|: 6 V, Maximum Collector Current |Ic max|: 6 A, Max. Operating Junction Temperature (Tj): 150 °C, Forward Current Transfer Ratio (hFE), MIN: 700, Noise Figure, dB: -, Package: TOP3, isc Silicon NPN Darlington Power Transistor 2SD1044DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MA

Question 3

What are equivalent components to 2SD1044A?

Accepted Answer

Common equivalents include: 2SD1039, 2SD104, 2SD1040, 2SD1040A, 2SD1041, 2SD1042, 2SD1043, 2SD1044

2SD1044A Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	170 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	700
Noise Figure, dB	-
Package	TOP3
isc Silicon NPN Darlington Power Transistor 2SD1044DESCRIPTIONHigh DC Current Gain	h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MA