25N40 Transistor — Specifications & Equivalents
25N40 Transistor Datasheet, 25N40 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 297 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 400 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 25 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 390 pF |
| Package | TO-247 |
| SSH25N40AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current | 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C |