25N40 Transistor — Specifications & Equivalents

25N40 Transistor Datasheet, 25N40 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation297 W
|Vds|ⓘ - Maximum Drain-Source Voltage400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current25 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance390 pF
PackageTO-247
SSH25N40AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

Equivalent & Replacement Parts

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