18N25 Transistor — Specifications & Equivalents

18N25 Transistor Datasheet, 18N25 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation138 W
|Vds|ⓘ - Maximum Drain-Source Voltage250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current18 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance330 pF
PackageTO-263 TO-220F
SUM18N25-165Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) ID (A)rDS(on) () 175 C Junction TemperatureRoHS0.165 at VGS = 10 V 250 18COMPLIANT Low Thermal Resistance PackageDTO-263GG D STop ViewSOrdering InformationSUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLU

Equivalent & Replacement Parts

Browse all electronic components