18N40 Transistor — Specifications & Equivalents

18N40 Transistor Datasheet, 18N40 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation360 W
|Vds|ⓘ - Maximum Drain-Source Voltage400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current18 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance280 pF
PackageTO-247 TO-220 TO-220F1
NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp//onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren
NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp//onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit

Equivalent & Replacement Parts

Browse all electronic components