TIP3055 Transistor — Specifications & Equivalents
TIP3055 Transistor Datasheet pdf, TIP3055 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 90 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 70 V |
| Maximum Emitter-Base Voltage |Veb| | 7 V |
| Maximum Collector Current |Ic max| | 15 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO218 |
| TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http | //onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell |