TSB145 bipolar transistor — Specifications & Equivalents
About the TSB145
The TSB145 is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 60 V, a continuous collector current (IC) of 10 A and a DC current gain (hFE) of minimum 1000. It can dissipate up to 125 W and is rated to a junction temperature of 150 °C. It is supplied in the TOP3 package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 60 V
- Max collector current (IC): 10 A
- DC current gain (hFE): minimum 1000
- Power dissipation (PD): 125 W
- Max junction temperature (TJ): 150 °C
- Package: TOP3
Typical applications
Judging from its ratings the TSB145 is generally applied in power output and driver stages.
The quoted current gain of minimum 1000 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 60 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 125 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the TSB145
A drop-in substitute for the TSB145 must be the same PNP type and offer a collector–emitter rating of at least 60 V, a collector current rating of at least 10 A and current gain in the same ballpark as minimum 1000.
Mechanically, check the replacement against the TOP3 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the TSB145?
The TSB145 is a PNP bipolar junction transistor (BJT). It is rated for 60 V collector-emitter and 10 A continuous collector current.
What is the maximum voltage of the TSB145?
Maximum collector-emitter voltage (Vceo) is 60 V.
How much current can the TSB145 handle?
Continuous collector current is rated at 10 A, with dissipation limited to 125 W.
What is the hFE of the TSB145?
DC current gain (hFE) is quoted as minimum 1000. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the TSB145 come in?
It is listed in TOP3. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the TSB145?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 125 W |
| Maximum Collector-Emitter Voltage |Vce| | 60 V |
| Maximum Collector Current |Ic max| | 10 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 1000 |
| Noise Figure, dB | - |
| Package | TOP3 |
Equivalent & Replacement Parts
- TRRR38
- TS7988
- TS7990
- TS7992
- TS7994
- TSB140
- TSB141
- TSB142
- D882P
- TSB146
- TSB147
- TSB3055
- TV105
- TV24215
- TV24372
- TV24576
- TV37