STF11NM80 MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by STMicroelectronics

About the STF11NM80

The STF11NM80 is a MOSFET with a drain–source voltage (VDS) rating of 800 V and a continuous drain current (ID) of 11 A. It can dissipate up to 35 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220FP package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 800 V
  • Max continuous drain current (ID): 11 A
  • Power dissipation (PD): 35 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220FP
  • Manufacturer: Commonly produced by STMicroelectronics

Typical applications

With its 800 V drain–source rating the STF11NM80 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 750 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the STF11NM80

A drop-in substitute for the STF11NM80 should match its polarity and offer a drain–source rating of at least 800 V and a continuous drain current rating of at least 11 A.

Mechanically, check the replacement against the TO220FP footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the STF11NM80?

The STF11NM80 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 800 V drain-source and 11 A continuous drain current.

What is the maximum voltage of the STF11NM80?

The STF11NM80 has a maximum drain-source voltage (Vds) of 800 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the STF11NM80 handle?

It is rated for 11 A of continuous drain current, with power dissipation limited to 35 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the STF11NM80 come in?

It is listed in TO220FP. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the STF11NM80?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation35 W
|Vds|ⓘ - Maximum Drain-Source Voltage800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current11 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance750 pF
PackageTO220FP

Equivalent & Replacement Parts

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