STF11NM60ND MOSFET — Specifications & Equivalents

About the STF11NM60ND

The STF11NM60ND is a MOSFET with a drain–source voltage (V_DS) rating of 600 V and a continuous drain current (I_D) of 10 A. It can dissipate up to 25 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220FP package.

At a glance

• Type: MOSFET
• Max drain–source voltage (V_DS): 600 V
• Max continuous drain current (I_D): 10 A
• Power dissipation (P_D): 25 W
• Max junction temperature (T_J): 150 °C
• Package: TO220FP
• Manufacturer: Commonly produced by STMicroelectronics

Typical applications

With its 600 V drain–source rating the STF11NM60ND sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±25 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (C_oss) of 44 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the STF11NM60ND

A drop-in substitute for the STF11NM60ND should match its polarity and offer a drain–source rating of at least 600 V and a continuous drain current rating of at least 10 A.

Mechanically, check the replacement against the TO220FP footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the STF11NM60ND?

The STF11NM60ND is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 10 A continuous drain current.

What is the maximum voltage of the STF11NM60ND?

The STF11NM60ND has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the STF11NM60ND handle?

It is rated for 10 A of continuous drain current, with power dissipation limited to 25 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the STF11NM60ND come in?

It is listed in TO220FP. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the STF11NM60ND?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.