Question 1

What is FGPF4536?

Accepted Answer

FGPF4536 Transistor Datasheet, FGPF4536 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of FGPF4536?

Accepted Answer

Key specifications include: Pcⓘ - Maximum Power Dissipation: 28.4 W, |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V, |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V, |Ic|ⓘ - Maximum Collector Current: 50 A @25℃, |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃, Tjⓘ - Maximum Junction Temperature: 150 ℃, Coesⓘ - Output Capacitance, typ: 56 pF, Package: TO220F, August 2010FGPF4536360V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses are High input impedanceessential. Fast switching RoH, August 2010FGPF4533330V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 Ations where low conduction and switching losses are essential. High input impedance Fast switching, August 2010FGPF4633330V PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70Ations where low conduction and switching losses are essential. High input impedance Fast switching R

Question 3

What are equivalent components to FGPF4536?

Accepted Answer

Common equivalents include: FGH75N60UF, FGH80N60FD, FGH80N60FD2, FGL35N120FTD, FGL60N100BNTD, FGP20N60UFD, FGP5N60LS, FGPF4533

FGPF4536 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pcⓘ - Maximum Power Dissipation	28.4 W
\|Vce\|ⓘ - Maximum Collector-Emitter Voltage	360 V
\|Vge\|ⓘ - Maximum Gate-Emitter Voltage	30 V
\|Ic\|ⓘ - Maximum Collector Current	50 A @25℃
\|VCEsat\|ⓘ - Collector-Emitter saturation Voltage, typ	1.59 V @25℃
Tjⓘ - Maximum Junction Temperature	150 ℃
Coesⓘ - Output Capacitance, typ	56 pF
Package	TO220F
August 2010FGPF4536360V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage	VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses are High input impedanceessential. Fast switching RoH
August 2010FGPF4533330V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage	VCE (sat) =1.55 V @ IC = 50 Ations where low conduction and switching losses are essential. High input impedance Fast switching
August 2010FGPF4633330V PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage	VCE(sat) = 1.55 V @ IC = 70Ations where low conduction and switching losses are essential. High input impedance Fast switching R