RJP30E2DPP-M0 Transistor — Specifications & Equivalents
RJP30E2DPP-M0 Transistor Datasheet, RJP30E2DPP-M0 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 25 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 360 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 30 V |
| |Ic|ⓘ - Maximum Collector Current | 35 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.7 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 60 pF |
| Package | TO220F |
Equivalent & Replacement Parts
- RJH60M2DPP-M0
- RJH60M3DPE
- RJH60M3DPP-M0
- RJH60M3DPQ-A0
- RJH60M5DPQ-A0
- RJH60M6DPQ-A0
- RJH60M7DPQ-A0
- RJH60T4DPQ-A0
- GT30F125
- RJP30E3DPP-M0
- RJP30H1DPD
- RJP30H1DPP-M0
- RJP30H2DPK-M0
- RJP30K3DPP-M0
- RJP6065DPM
- RJP60D0DPE
- RJP60D0DPP-M0