BC557VI Transistor — Specifications & Equivalents
BC557VI Transistor Datasheet pdf, BC557VI Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 45 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.2 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 75 MHz |
| Collector Capacitance (Cc) | 9 pF |
| Forward Current Transfer Ratio (hFE), MIN | 75 |
| Noise Figure, dB | - |
| Package | TO92 |
| BC556/557/558/559/560Switching and Amplifier High Voltage | BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V |