BC327 Transistor — Specifications & Equivalents
BC327 Transistor Datasheet pdf, BC327 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 45 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.8 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 60 MHz |
| Collector Capacitance (Cc) | 18 pF |
| Forward Current Transfer Ratio (hFE), MIN | 63 |
| Noise Figure, dB | - |
| Package | TO92 |
| BC327/328Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage | BC327 -50 V: BC328 -30 VVCEO Collector-Emitter Vo |
Equivalent & Replacement Parts
- BC321C
- BC322
- BC322B
- BC322C
- BC323
- BC324
- BC325
- BC326
- 2N2222
- BC327-01
- BC327-10
- BC327-16
- BC327-25
- BC327-40
- BC327AP
- BC327BP
- BC327CP