BC556AP Transistor — Specifications & Equivalents
BC556AP Transistor Datasheet pdf, BC556AP Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 80 V |
| Maximum Collector-Emitter Voltage |Vce| | 65 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 150 MHz |
| Collector Capacitance (Cc) | 8 pF |
| Forward Current Transfer Ratio (hFE), MIN | 125 |
| Noise Figure, dB | - |
| Package | TO92 |