BC337-10 Transistor — Specifications & Equivalents
BC337-10 Transistor Datasheet pdf, BC337-10 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 45 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 50 MHz |
| Collector Capacitance (Cc) | 24 pF |
| Forward Current Transfer Ratio (hFE), MIN | 67 |
| Noise Figure, dB | - |
| Package | TO92 |