8205P Transistor — Specifications & Equivalents
.8205P Transistor Datasheet, .8205P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 1.68 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 12 V |
| |Id| ⓘ - Maximum Drain Current | 6 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 98 pF |
| Package | SOT23-6 |
| NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp | //onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required |
| TPCP8205-HMOSFETs Silicon N-Channel MOS (U-MOS)TPCP8205-HTPCP8205-HTPCP8205-HTPCP8205-H1. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Low drain-source on-resistance | RDS(ON) = 20 m |