8205P MOSFET — Specifications & Equivalents
About the 8205P
The 8205P is a MOSFET with a drain–source voltage (VDS) rating of 20 V and a continuous drain current (ID) of 6 A. It can dissipate up to 1.68 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT23-6 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 20 V
- Max continuous drain current (ID): 6 A
- Power dissipation (PD): 1.68 W
- Max junction temperature (TJ): 150 °C
- Package: SOT23-6
Typical applications
With its 20 V drain–source rating the 8205P sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.
Gate drive and switching notes
Keep gate–source voltage within the ±12 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 98 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 8205P
A drop-in substitute for the 8205P should match its polarity and offer a drain–source rating of at least 20 V and a continuous drain current rating of at least 6 A.
Mechanically, check the replacement against the SOT23-6 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 8205P?
The 8205P is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 20 V drain-source and 6 A continuous drain current.
What is the maximum voltage of the 8205P?
The 8205P has a maximum drain-source voltage (Vds) of 20 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 8205P handle?
It is rated for 6 A of continuous drain current, with power dissipation limited to 1.68 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 8205P come in?
It is listed in SOT23-6. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 8205P?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 1.68 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 12 V |
| |Id| ⓘ - Maximum Drain Current | 6 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 98 pF |
| Package | SOT23-6 |
| NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp | //onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required |
| TPCP8205-HMOSFETs Silicon N-Channel MOS (U-MOS)TPCP8205-HTPCP8205-HTPCP8205-HTPCP8205-H1. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Low drain-source on-resistance | RDS(ON) = 20 m |