Question 1

What is 2SK3625?

Accepted Answer

2SK3625 Transistor Datasheet, 2SK3625 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2SK3625?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 100 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 25 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 1060 pF, Package: TO220FL, 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 80 (typ.) (IDSS = 5 mA) Absolute Maximum Ratings (Ta = 25C) Cha, SMD Type ICSMD Type TransistorsSilicon N-channel Power MOSFET2SK3628TO-263Unit: mm+0.2Features 4.57-0.21.27+0.1-0.1High-speed switchingLow ON resistance RonNo secondary breakdownAvalanche energy capability guaranteed0.1max1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Para

Question 3

What are equivalent components to 2SK3625?

Accepted Answer

Common equivalents include: 2SK3506, 2SK3543, 2SK3561, 2SK3562, 2SK3563, 2SK3567, 2SK3568, 2SK3569

2SK3625 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	100 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	200 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	25 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	1060 pF
Package	TO220FL
2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current Unit	mmand Impedance Converter Applications High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 80 (typ.) (IDSS = 5 mA) Absolute Maximum Ratings (Ta = 25C) Cha
SMD Type ICSMD Type TransistorsSilicon N-channel Power MOSFET2SK3628TO-263Unit	mm+0.2Features 4.57-0.21.27+0.1-0.1High-speed switchingLow ON resistance RonNo secondary breakdownAvalanche energy capability guaranteed0.1max1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Para