2SD1050 Transistor — Specifications & Equivalents
2SD1050 Transistor Datasheet pdf, 2SD1050 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 80 W |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Collector Current |Ic max| | 9 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 10000 |
| Noise Figure, dB | - |
| Package | MT-200 |
| TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units | mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 / |
| Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit | mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5 |